JPH0429225B2 - - Google Patents

Info

Publication number
JPH0429225B2
JPH0429225B2 JP57190407A JP19040782A JPH0429225B2 JP H0429225 B2 JPH0429225 B2 JP H0429225B2 JP 57190407 A JP57190407 A JP 57190407A JP 19040782 A JP19040782 A JP 19040782A JP H0429225 B2 JPH0429225 B2 JP H0429225B2
Authority
JP
Japan
Prior art keywords
gate electrode
active layer
semiconductor
region
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57190407A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5979576A (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP57190407A priority Critical patent/JPS5979576A/ja
Publication of JPS5979576A publication Critical patent/JPS5979576A/ja
Publication of JPH0429225B2 publication Critical patent/JPH0429225B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes

Landscapes

  • Junction Field-Effect Transistors (AREA)
JP57190407A 1982-10-29 1982-10-29 電界効果型半導体装置 Granted JPS5979576A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57190407A JPS5979576A (ja) 1982-10-29 1982-10-29 電界効果型半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57190407A JPS5979576A (ja) 1982-10-29 1982-10-29 電界効果型半導体装置

Publications (2)

Publication Number Publication Date
JPS5979576A JPS5979576A (ja) 1984-05-08
JPH0429225B2 true JPH0429225B2 (en]) 1992-05-18

Family

ID=16257626

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57190407A Granted JPS5979576A (ja) 1982-10-29 1982-10-29 電界効果型半導体装置

Country Status (1)

Country Link
JP (1) JPS5979576A (en])

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60136264A (ja) * 1983-12-23 1985-07-19 Nec Corp 半導体装置の製造方法
JPH0812867B2 (ja) * 1984-05-23 1996-02-07 日本電気株式会社 半導体装置
JPS6143482A (ja) * 1984-08-08 1986-03-03 Oki Electric Ind Co Ltd 電界効果トランジスタの製造方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5857752A (ja) * 1981-09-30 1983-04-06 Nec Corp 半導体装置の製造方法
US4404732A (en) * 1981-12-07 1983-09-20 Ibm Corporation Self-aligned extended epitaxy mesfet fabrication process

Also Published As

Publication number Publication date
JPS5979576A (ja) 1984-05-08

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